technical data npn low power silicon transistor qualified per mil - prf - 19500/182 devices qualified level 2n720a 2n1893 2n1893s jan jantx jantxv maximum ratings ratings symbol all devices units collector - emitter voltage v ceo 80 vdc collec tor - base voltage v cbo 120 vdc emitter - base voltage v ebo 7.0 vdc collector - emitter voltage (r be = 10 w ) v cer 100 vdc collector current i c 500 madc 2n720a 2n1893, s total power dissipation @ t a = +25 0 c (1) @ t c = +25 0 c (2) p t 0.5 1.8 0.8 3.0 w operating & storage junction temperature range t j , t srg - 65 to +200 0 c thermal characteristics characteristics symbol 2n720a 2n1893, s unit thermal resistance, junction - to - case r q jc 97 58 0 c/w 1) derate linearly 2 .86 mw/ 0 c for 2n720a, 4.57 mw/ 0 c for 2n1893, s t a > 25 0 c 2) derate linearly 10.3 mw/ 0 c for 2n720a, 17.2 mw/ 0 c for 2n1893, s t c > 25 0 c to - 18 (to - 206aa)* 2n720a to - 5* 2n1893, 2n1893s *see appendix a for package outline electrical characteristics (t a = 25 0 c unless otherwise noted) characteristics symbol min. max. unit off characteristics collector - emitter breakdown voltage i c = 30 madc v (br) ceo 80 vdc collector - emitter breakdown voltage i c = 10 madc, r be = 10 w v (br) cer 100 vdc colle ctor - base cutoff current v cb = 120 vdc v cb = 90 vdc i cbo 10 10 m adc h adc emitter - base cutoff current v eb = 7.0 vdc v eb = 5.0 vdc i ebo 10 10 m adc h adc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 1 of 2
2n 720a; 2n1893; 2n1893 s jan series electrical characteristics (con?t) characteristics symbol min. max. unit on characteristics (3) forward - current transfer ratio i c = 0.1 madc, v ce = 10 vdc i c = 10 madc, v ce = 10 vdc i c = 150 madc, v ce = 10 vdc h fe 20 35 40 120 collector - emitter saturation voltage i c = 150 madc, i b = 15 madc v ce(sat) 5.0 vdc base - emitter voltage i c = 150 madc, i b = 15 madc v be(sat) 1.3 vd c dynamic characteristics magnitude of common emitter small - signal short - circuit forward current transfer ratio i c = 50 madc, v ce = 10 vdc, f = 20 mhz ? h fe ? 3.0 10 small - signal short - circuit forward current transfer ratio v ce =5.0 vdc, i c = 1.0 madc v ce =10 vdc, i c = 5.0 madc, f = 1.0 khz h fe 35 45 100 small - signal short - circuit input impedance v cb = 10 vdc, i c = 5.0 madc h ib 4.0 8.0 w small - signal short - circuit output admittance v cb = 10 vdc, i c = 5.0 madc h ob 0.5 m w output capac itance v cb = 10 vdc, i e = 0, 100 khz f 1.0 mhz c obo 2 15 p f switching characteristics turn - on time + turn - off time (see figure 3 of mil - prf - 19500/182) t on + t off 30 h s (3) pulse test: pulse width = 300 m s, duty cycle 2.0%. 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2
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